| 1. | The effect is caused by the escape of electrons from the hot filament .
这个效应是由于电子从热灯丝逸出而引起的。 |
| 2. | Using a magnetic field to curve the path of the e-beam permits screening of the hot filament .
用一个磁场使电子束走曲线路径能够屏蔽热阴极。 |
| 3. | Genetic optimization of hot filament parameters in hfcvd system
系统热丝参数遗传优化 |
| 4. | Oriented growth of diamond film on si via plasma enhanced hot filament chemical vapor deposition
等离子体增强热丝化学气相沉积法生长取向金刚石薄膜 |
| 5. | 3 we for the first time prepared hbn - cbn mixed films with the hot filament assisted ecr cvd system
3首次利用热丝辅助ecrcvd系统制备了hbn七bn混合薄膜。 |
| 6. | In small lamps , all the air is pumped from the glass bulb , forming a vacuum , which prevents the white - hot filament from burning away
在小照明灯中，所有的空气都从灯泡中抽出，形成真空，以防炽热的灯丝被烧毁。 |
| 7. | The diamond film is grown using a hot filament chemical vapor deposition , basing on the diamond micro - grits on silicon substrates
实验中外延金刚石薄膜采用热丝cvd法生长,生长于事先电泳沉积在硅衬底的金刚石微粒上。 |
| 8. | 4 the influence of substrates on the formation of c - bn thin films the cbn thin films were deposited on different substrates with hot filament assisted plasma cvd and r . f sputter . the substrates are si . ~ ni co ~ stainless steel and other materials
4研究了衬底对制备立方氮化硼薄膜的影响我们用热丝辅助等离子体cvd将立方氨化硼薄膜沉积在8 、 ni 、有ni过渡层的出衬底州st ） 、 c 。 |
| 9. | But there are still several problems concerning the stability and reproducibility of device fabrication . the heavily born doped p - type diamond films synthesized by hot filament chemical vapor deposition with b ( ch3 ) 3 as boron source substituted the metal electrode aluminum
本文还利用热灯丝化学汽相沉积( hfcvd )法，采用硼酸三甲酯b ( ch3 ) 3为硼源制备了重掺杂p型金刚石膜，作为lppp / alq异质结增强型发光器的电极。 |
